METHOD FOR FABRICATING WIDE HEAD GATE OF MOS TYPE SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a wide head gate of a MOS type semiconductor device is provided to reduce a contact resistance by increasing a process margin in a contact formation process. CONSTITUTION: An active region is defined on a semiconductor substrate(11) by a field oxide layer(12). A gate oxide layer(13) is deposited on the active region of the semiconductor substrate(11). The first conductive layer(14) for forming a gate electrode and the second conductive layer(15) are deposited sequentially on the whole surface of the semiconductor substrate(11). A gate pattern(16) for gate electrode is formed on an upper portion of the second conductive layer. The second conductive layer(15), the first conductive layer(14), and the gate oxide layer(13) are etched by an anisotropic etch method using the gate pattern(16) as a mask. The second conductive layer(15), the first conductive layer(14), and the gate oxide layer(13) are overetched by an isotropic etch method. The gate pattern(16) is removed.