| 摘要 |
PURPOSE: A matrix distributed amplifier is provided to be capable of increasing a gain without reduction of a bandwidth by shifting output line field effect transistors into an output load. CONSTITUTION: A plurality of first field effect transistors(300, 302, 304, 306, 308) have gates connected to an input transmission line formed between an input terminal(IN) and the first resistor(Zoi) and drains connected to an intermediate transmission line formed between one end of the second resistor(Zoc) and one end of the third resistor(Zoc). A plurality of second field effect transistors(236, 238, 240, 242, 244) have gates connected to the intermediate transmission line and drains connected to an output transmission line formed between an output terminal(OUT) and one end of the fourth resistor(Zoc). The intermediate transmission line has dummy intermediate lines(276-282), forming an open stub, which are not connected to the first field effect transistors.
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