| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming the gate electrode of a semiconductor element having a uniform height. SOLUTION: Using a polymer layer pattern formed on a semiconductor substrate 20 as a polishing stopper layer, an insulation oxide film 24 formed on the upper surface thereof is subjected to chemical mechanical polishing, the polymer layer pattern is then removed and the semiconductor substrate 20 is exposed to form an opening. Subsequently, a gate insulation layer 25, a barrier metal film 26 and a metal film 27 are formed sequentially in the opening and the metal film 27 is subjected to chemical mechanical polishing using the insulation oxide film 24 as a polishing stopper layer. After a part of the metal film 27 is removed by etching, a mask nitride film 28 is formed and subjected to chemical mechanical polishing until the insulation oxide film 24 is exposed thus forming the gate electrode of a semiconductor element.
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