发明名称 |
Control system for photolithographic processes |
摘要 |
In the control method for photolithographic processes, line width errors and/or positional errors measured on processed semiconductor wafers are used to calculate correction values for the exposure intensity and/or the xy positioning of the semiconductor wafer. Optimized correction values for a subsequent batch of semiconductor wafers to be processed are calculated by averaging correction values over a number of previously calculated correction values. Only those correction values which lie within a predetermined value range are used in the average.
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申请公布号 |
US2002012861(A1) |
申请公布日期 |
2002.01.31 |
申请号 |
US20010919230 |
申请日期 |
2001.07.31 |
申请人 |
LUHN GERHARD;SARLETTE DANIEL |
发明人 |
LUHN GERHARD;SARLETTE DANIEL |
分类号 |
G03F7/20;(IPC1-7):G03C5/00;G06K9/00 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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