END POINT DETECTOR OF CMP APPARATUS

摘要

PURPOSE: An end point detector of a CMP(Chemical Mechanical Polishing) apparatus is provided to apply the same etch ratio to a center portion of a wafer contacted with a window and an edge portion of the wafer by improving a structure of the window. CONSTITUTION: A slurry inflow groove(165) is formed on an upper portion of a window(160) facing a wafer. A slurry is transferred between the window(160) and the wafer through a polishing pad(120). The slurry is discharged to the outside through the groove(165). The slurry inflow groove(165) is formed with the first groove(163) and the second groove(164). The first groove(163) is formed to a lateral direction of the window(160). The second groove(164) is formed in a longitudinal direction of the window(160). The first groove(163) is connected with the second groove(164).