| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus and a gas dispersing plate which lower the gas temperature of a gas used in a wafer treatment apparatus, while not damaging a wafer during ashing treatment. SOLUTION: This plasma treatment apparatus 10 has a plasma generator 14 and an inner chamber 17, communicating with the plasma generator 14 so as to be made to react with a wafer 18 surface. This apparatus also includes a wall 53 for forming the inner chamber at least partially and further has a treatment chamber 16 provided with a first cooling passage to this wall, an inlet and an outlet for a cooling medium and a radiative heating assembly 20 for heating the wafer 18. Further, the apparatus also includes a gas dispersing plate, that is, a baffle plate, which is equipped with a cooling passage for lowering the operation temperature during wafer treatment. The wall of the treatment chamber and the cooling passage of the baffle plate constitute a cooling circulation system, while communicating with each other. |
