发明名称 POSITIVE PHOTORESIST COMPOSITION AND PROCESS FOR FORMING RESIST PATTERN USING SAME
摘要 Disclosed are a positive photoresist composition including (A) an alkali-soluble resin, (B) a photosensitizer containing a quinonediazide ester of, e.g., bis[2,5-dimethyl-3-(2-hydroxy-5-methylbenzyl)-4-hydroxyphenyl]methane and (C) e.g., 2,6-bis(2,5-dimethyl-4-hydroxybenzyl)-4-methylphenol; and a process including the steps of coating the composition onto a 8 to 12-inch substrate, drying, exposing and developing the same. The composition which can form a pattern having a good shape whose dimensional changes are minimized in a wide range over surface of the substrate, particularly in processes using a large-diameter substrate, and the process for forming a resist pattern using the composition are provided.
申请公布号 US2002012865(A1) 申请公布日期 2002.01.31
申请号 US19990322978 申请日期 1999.06.01
申请人 SUZUKI TAKAKO;TAMURA SACHIKO;DOI KOUSUKE;KOHARA HIDEKATSU;NAKAYAMA TOSHIMASA 发明人 SUZUKI TAKAKO;TAMURA SACHIKO;DOI KOUSUKE;KOHARA HIDEKATSU;NAKAYAMA TOSHIMASA
分类号 G03F7/022;H01L21/027;(IPC1-7):G03F7/032;G03F7/40 主分类号 G03F7/022
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