| 摘要 |
PROBLEM TO BE SOLVED: To provide a poly-thin-film transistor which can bring a better effect in an annealing operation and an activation operation, by a method wherein a comparatively thin insulating layer is formed on a gate metal layer, and to provide its manufacturing method. SOLUTION: The manufacturing method for the poly-thin-film transistor is provided with a process wherein a source metal wire 21, a drain metal wire 23 and a gate metal wire 22 are provided on a transparent substrate, and metal layers with gaps are formed between the wire 21 and the wire 22 as well as between the wire 23 and the wire 22; a process in which the wire 22 is covered with an insulating layer 30; a process wherein an amorphous semiconductor layer which crosses the insulating layer 30 and both sides of which are connected respectively to the wire 21 and the wire 23 is formed; a process wherein the amorphous semiconductor layer is crystallized so as to form a poly- semiconductor layer 40, and a doping region which is connected to the wire 21 and the wire 23 in the poly-semiconductor layer 40 is doped with high- concentration ions; and a process in which the poly-semiconductor layer 40 is activated.
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