METHOD FOR DEPOSITING SiGe FILM

摘要

PROBLEM TO BE SOLVED: To obtain the aimed profile of various Ge composition ratios with high precision in the method for depositing an SiGe film. SOLUTION: In this method for depositing an Si(1-x)Gex film (0<=x<=1) by a low pressure CVD method in the pressure range of 0.133 Pa to 1×105 Pa by using gaseous hydrogen as dilution gas, provided that the ratio of the flow rate of a gaseous starting material containing Ge to the flow rate of a gaseous starting material containing Si is defined as (y), the flow rate (y) is controlled based on the following relational formula of x=(1/(1+a/y)((1+by)(1+cy))) ((a), (b) and (c) are each a constant), and the Si(1-x)Gex film is deposited.