| 摘要 |
PURPOSE: To prevent a semiconductor element contained in a macro on the side lower in operation voltage from being broken, by outputting a signal from a macro which is supplied with high power voltage to perform burn-in to a macro which is supplied with low power voltage to perform burn-in, in a semiconductor integrated circuit which includes two macros where burn-in is performed while they are supplied with different power voltages. CONSTITUTION: This semiconductor integrated circuit possesses the first macro (1) which outputs data signals (Qj), and the second macros (2, 12, 22, and 32) into which the data signals (Qj) are inputted. The first macro (1) fixes the data signal (Qj) into the nonhigh level condition not on a high level, in answer to a control signal (BURN IN). The control signal (BURN IN) instructs that semiconductor integrated circuit to fix the data signal (Qj) into the above nonhigh level condition when burn-in is applied.
|
