发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide a technique for manufacturing a high performance electrooptical device by using a plastic supporting body. SOLUTION: A first fixing substrate 101 and an element forming substrate 103 composed of a resin substrate are stuck together with a first adhesive layer and subsequently TFT(thin film transistor) elements and pixel electrodes are formed on the element forming substrate. A second fixing substrate 106 composed of the resin substrate is stuck thereon by a second adhesive layer 107 so as to hold a liquid crystal material 108 in between and the second adhesive layer 107 is removed and the first fixing substrate 101 is separated or released by making a YAG(yttrium aluminum garnet) laser beam irradiate the manufactured body in this state.</p>
申请公布号 JP2002031818(A) 申请公布日期 2002.01.31
申请号 JP20000216697 申请日期 2000.07.17
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 YAMAZAKI SHUNPEI;TAKAYAMA TORU
分类号 G02F1/1339;G02F1/1333;G02F1/136;G02F1/1368;G09F9/30;H01L21/336;H01L27/32;H01L29/786;H01S3/00;(IPC1-7):G02F1/136;G02F1/133 主分类号 G02F1/1339
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