发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a technique for manufacturing a high performance electrooptical device by using a plastic supporting body. SOLUTION: A first fixing substrate 101 and an element forming substrate 103 composed of a resin substrate are stuck together with a first adhesive layer and subsequently TFT(thin film transistor) elements and pixel electrodes are formed on the element forming substrate. A second fixing substrate 106 composed of the resin substrate is stuck thereon by a second adhesive layer 107 so as to hold a liquid crystal material 108 in between and the second adhesive layer 107 is removed and the first fixing substrate 101 is separated or released by making a YAG(yttrium aluminum garnet) laser beam irradiate the manufactured body in this state.</p> |
申请公布号 |
JP2002031818(A) |
申请公布日期 |
2002.01.31 |
申请号 |
JP20000216697 |
申请日期 |
2000.07.17 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
YAMAZAKI SHUNPEI;TAKAYAMA TORU |
分类号 |
G02F1/1339;G02F1/1333;G02F1/136;G02F1/1368;G09F9/30;H01L21/336;H01L27/32;H01L29/786;H01S3/00;(IPC1-7):G02F1/136;G02F1/133 |
主分类号 |
G02F1/1339 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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