| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for growing a nitride semiconductor that constitutes a new nitride semiconductor element. SOLUTION: The method for growing nitride semiconductor includes a step of reducing the concentration of an n-type impurity in a second nitride semiconductor layer as parting from a first nitride semiconductor layer by growing the second nitride semiconductor layer by using a p-type impurity gas source, a group III element gas source, and a nitrogen gas source by gradually reducing the flow rate of the p-type impurity gas source, while the second nitride semiconductor is grown after the first nitride semiconductor layer containing the p-type impurity is grown by using the p-type impurity-source gas, group III element- source gas, and nitrogen gas source in a reaction chamber. |
