| 摘要 |
PURPOSE: A method for fabricating an anti-fuse of a semiconductor device is provided to reduce an area of a fuse box region by connecting a metal line contact plug with a storage electrode contact plug. CONSTITUTION: The first interlayer dielectric(13) is formed on a fuse box region of a semiconductor substrate(11). A polysilicon layer is formed on a whole surface of the semiconductor substrate(11). A storage electrode contact plug(15a) and an anti-fuse electrode(15b) are formed by etching the polysilicon layer. A storage electrode(17) connected with the storage electrode contact plug(15a) is formed thereon. A dielectric layer and a conductive layer are formed on the whole surface of the semiconductor substrate(11). A dielectric layer pattern and a plate electrode(21) are formed by etching the conductive layer and the dielectric layer. The second interlayer dielectric(23) is formed on the whole surface of the semiconductor substrate(11). A plurality of metal line contact plug(25a,25b) is formed thereon. A plurality of meta line(27a,27b) is formed thereon.
|
