发明名称 Embedded decoupling capacitor
摘要 A structure for a semiconductor chip which includes a first region having first cells for storing and processing data, and a second region outside the first region having OPC structures, wherein the OPC structures comprise decoupling capacitors. The line widths of the active gates of first cells are the same size or similar in size as the OPC structures. The OPC structures reduce proximity effects of active devices in the first cells, and comprise N-type FETs and P-type FETs, that are located in the second region. The OPC structures may have a width greater than the first cells. The second region can be multiple OPC structures, whereby the second region comprises multiple decoupling capacitors. The active devices in the first cells are separated by a first distance and the OPC structures are separated from the active devices by the first distance.
申请公布号 AU8760501(A) 申请公布日期 2002.01.30
申请号 AU20010087605 申请日期 2001.07.12
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION;IBM DEUTSCHLAND GMBH 发明人 ARCHIBALD J. ALLEN;OREST BULA;JOHN M. COHN;DANIEL COLE;EDWARD W. CONRAD;WILLIAM C. LEIPOLD
分类号 H01L21/822;H01L21/02;H01L27/04;H01L27/06;H01L27/105;H01L27/12 主分类号 H01L21/822
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