| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a metal wiring of a semiconductor element by forming a good quality of uniform copper seed and depositing copper on it by electroless plating to form a selective copper wiring. SOLUTION: The method includes steps of providing a substrate 1 having a damascene pattern 3 formed on an interlayer insulating film 2, forming a diffusion barrier layer 4 on the entire structure having the damascene pattern formed thereon, depositing copper precursor on the diffusion barrier layer by a spin-on step, changing the copper precursor to a porous copper layer 5b by a baking step, subjecting the porous copper layer to a hydrogen reduction annealing step and a forcible filling step to form a copper seed layer 5c at the bottom of the damascene pattern, depositing copper by electroless plating in such a manner that the damascene pattern is sufficiently filled, and forming a copper wiring 6b by CMP(chemical mechanical polishing).
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