| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, having a pattern structure that will not cause deterioration in the performance of a transistor, when designing a semiconductor IC circuit for the semiconductor device. SOLUTION: First gate electrodes 1-4, which contribute to the operation of the transistor and second gate electrodes 19, 20 which do not contribute to the operation of the transistor, have the same length and are disposed with the same pitch along the gate length direction. Both end parts in the gate width direction of each of the first gate electrodes 1-4 and second gate electrodes 19, 20 are extended beyond the widths of the respective longest active regions.
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