| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a compound semiconductor substrate, which reduces variations in temperature on a surface of a wafer and suppresses sliding, and a compound semiconductor wafer. SOLUTION: In a method for manufacturing the compound semiconductor substrate 10 for MOVPE, on which an epitaxial layer 20 made of a material including GaAlAs is grown according to MOVPE method, and the compound semiconductor wafer using the same, when a surface 1 where the epitaxial layer 20 is formed is placed face up, a central part 3 is bent at a high position and a peripheral part 4 is bent at a low position. |
