| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, in particular, a semiconductor laser, of excellent characteristics, by satisfactorily growing an Al-rich semiconductor layer on a P-containing layer. SOLUTION: In a III-V semiconductor multilayer film, a layer 11 having thickness of 1 nm or thicker and not containing P and Al is sandwiched between a layer 10 having a content of P of group-V of 20% or more and a layer 12 having an Al content of 20% or more. By adopting this structure, resistance increase in the Al-containing layer can be prevented by suppressing incorporation of Si impurities which compensate p-type dopants of Zn in the Al-containing layer. |
