发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT AND NONVOLATILE MEMORY |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a boosting circuit which can generate a high boosting voltage at 10 times or more o the basis of a comparatively low power-supply voltage in a semiconductor integrated circuit which comprises an internal boosting circuit such as a flash memory. SOLUTION: Charging pumps (CP11, CP12, CP10) which perform a first-stage boosting operation on the basis of the power-supply voltage are constituted to be of a capacitor parallel type. Charging pumps (CP21, CP22, CP20) which perform a second-stage boosting operation on the basis of a boosting voltage generated by the charging pumps are constituted to be of a capacitor serial type.</p> |
申请公布号 |
JP2002026254(A) |
申请公布日期 |
2002.01.25 |
申请号 |
JP20000200652 |
申请日期 |
2000.07.03 |
申请人 |
HITACHI LTD;HITACHI ULSI SYSTEMS CO LTD |
发明人 |
KISHIMOTO JIRO;SATO HIROSHI;NODA TOSHIFUMI;ISHII TATSUYA;KUBONO SHOJI;OGINO TAKASHI |
分类号 |
G11C16/06;G11C16/30;H01L21/822;H01L21/8247;H01L27/04;H01L27/10;H01L27/115;H02M3/07;(IPC1-7):H01L27/04;H01L21/824 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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