| 摘要 |
PROBLEM TO BE SOLVED: To realize a dry-etching method capable of obtaining wafers having stable performance even if a plurality of the wafers are subjected to processing in a case of etching a laminated gate and ensuring the same result with a case of using actual wafer samples even when dummy wafers are used in a continuous test. SOLUTION: When a plurality of wafers are successively subjected to etching for forming multilayered film gates formed of metal and poly-Si different from each other in reactivity, the amount of an Si reaction product is properly regulated in an etching condition that is just previously set, by which a dimensional shift is restrained from occurring between a first wafer and a second wafer in an etching process. When Si dummy wafers are used in a continuous test, the amount of a reaction product is regulated in a dummy wafer etching condition, by which actual samples subjected to etching just after the dummy Si wafers can be processed without incurring a dimensional shift, so that expensive actual samples to prepare can be decreased in number.
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