| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for fabricating a semiconductor device in which arcing due to emission of thermal electron can be reduced during a sputtering process for forming bumps. SOLUTION: High frequency plasma (e.g. inert gas plasma of Ar+) is generated in a sputtering chamber. Consequently, metal particles for UBM fly from a target 15 for UBM in the chamber to a wafer to deposit UBM 13 including the electrical connection area 11a of a pad 11. When a protective film 12 of 1.0μm thick or above is applied and an oxide film 16 thick enough (e.g. several tens nm) to increase the capacitance at least for a wafer holder is provided on the rear surface of an Si wafer 10, arc power of the Si wafer is lowered and generation of hot spots (hot cathodes) can be suppressed.</p> |
