| 摘要 |
PROBLEM TO BE SOLVED: To provide a horizontal semiconductor device which can be improved further in fracture resistance. SOLUTION: This horizontal semiconductor device is provided with an N-type island area 2, P-type base and, drain layers 3 and 8 separately formed in the island area 2, and an N+-type source layer 5 formed on the base layer 3. The device is also provided with a source electrode 7 electrically connected to the base layer 3 and source layer 5, gate and field oxide films 11 and 35 formed on the island area 2, and a gate electrode 10 which is formed at least on the island area 2 and the base layer 3 between the island area 2 and source layer 5 through the gate oxide film 11. In addition, an electrically floating P-type diffusion layer 14 is formed in the island area 2 below the end area 13 of the gate electrode 10. |
