METHOD FOR EVALUATING QUALITY OF SILICON WAFER AND METHOD FOR REGENERATING SILICON WAFER

摘要

PROBLEM TO BE SOLVED: To provide a method for evaluating the quality of a silicon wafer in which crystal defect in the silicon wafer can be detected nondestructively with high accuracy. SOLUTION: A silicon wafer is analyzed by infrared absorption spectrum and the quality of the silicon crystal is evaluated based on the ratio of absorbance shown by formula (1). (arbitrary absorbanceα1 in 1055-1080 cm-1)-(absorbanceαBL of baseline)/(arbitrary absorbanceα2 in 1100-1120 cm-1)-(absorbanceαBL of baseline)...(1) In the formula, the absorbanceα1 and the absorbanceα2 represent the absorbance of the silicon wafer under measurement, the absorbanceαBL of baseline represents the absorbance of baseline in 1030-1170 cm-1 of the silicon wafer under measurement.