发明名称 MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To improve the reliability of connection between bump electrodes of a semiconductor chip and electrode pads of a wiring board when the semiconductor chip is mounted on the wiring board by a flip-chip way through the bump electrodes. SOLUTION: When a silicon chip 6A having narrow-pitch Au bumps 9 is mounted on a module substrate 2, the difference in thermal expansion between the silicon chip 6A and module substrate 2 is taken into account and the total pitch of electrode pads 4a of the silicon chip 6A is previously made narrower than the total pitch of Au bumps 9 to prevent the Au bumps 9 and electrode pads 4a from shifting in position in a heat treatment, thereby securing the contact area between the both.
申请公布号 JP2002026072(A) 申请公布日期 2002.01.25
申请号 JP20000207495 申请日期 2000.07.07
申请人 HITACHI LTD;HITACHI HOKKAI SEMICONDUCTOR LTD 发明人 SUMI YOSHIYUKI;FUNAKI TSUKIO;KIKUCHI HIROSHI;YOSHIDA IKUO
分类号 H01L25/18;H01L21/60;H01L23/498;H01L23/528;H01L25/04;H01L27/14 主分类号 H01L25/18
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