| 摘要 |
PROBLEM TO BE SOLVED: To provide an electromagnetic wave detector and an image detector in which few local structural changes or charge inhibiting characteristic failures occur in semiconductor films. SOLUTION: A charge collecting electrode 11 is constituted of an amorphous transparent conductive oxide film composed essentially of ITO, indium-zinc oxide, indium-germanium oxide, etc. The electrode 11 is formed of the amorphous transparent conductive oxide film which is free from such trade off that the resistance value or transparency of the film deteriorates and has smooth surface morphology and an amorphous semiconductor film 6 composed of a-Se, etc., is formed on the electrode 11.
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