| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a solid-state image pickup device wherein a gate insulating silicon nitride film and a reflection preventing silicon nitride film are formed in the same process while suppressing thickness decrease of the reflection preventing film when etching. SOLUTION: On a silicon substrate 10 comprising a transfer channel 11 and a light receiving part 12, a silicon oxide film 13, a silicon nitride film 14 which functions as a gate insulating film and a reflection preventing film, and a protective film 15 are formed in this order. A process is provided where, at least above the light receiving part 12, after a polysilicon film is formed through the protective film 15, the polysilicon film is etched to form a transfer electrode 17 above the transfer channel 11. The polysilicon film is so etched that, above the light receiving part 12, the polysilicon film is removed while the protective film 15 remains.
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