发明名称 Interface circuit for using in high-speed semiconductor device and interfacing method
摘要 The present invention discloses an interface circuit suitable for a high-speed semiconductor device. The interface circuit includes an input driver producing a first and second output signal having opposite phases to each other by receiving an external power supply voltage as an operation voltage and buffering an input signal to the level of the external power supply voltage; a cross-coupled sense amplifier for receiving an internal power supply voltage as an operation voltage when a control signal is in the first transition state, and performing a differential amplification by receiving the first output signal at a first input end and receiving the second output signal at a second input end; an output potential fixation element for keeping a potential of an output end of the cross-coupled sense amplifier at a uniform potential corresponding to a level of the internal power supply voltage only when the control signal is in the second transition state; and an output driver for receiving the internal power supply voltage as an operation voltage and buffering the output signal at the output end into the level of the internal power supply voltage to be applied into a circuit in the chip.
申请公布号 US2002009013(A1) 申请公布日期 2002.01.24
申请号 US20000726998 申请日期 2000.11.30
申请人 SAMSUNG ELECTONICS CO., LTD. 发明人 LEE YOUNG-DAE
分类号 G11C5/14;(IPC1-7):G11C8/00 主分类号 G11C5/14
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