METHOD AND APPARATUS FOR MODELING THICKNESS PROFILES AND CONTROLLING SUBSEQUENT ETCH PROCESS

摘要

A processing line (10) includes a deposition tool (30), a metrology tool (40), an etch tool (50), and a process controller (60). The deposition tool (30) is adapted to form a process layer on a plurality of wafers. The metrology tool (40) is adapted to measure the thickness of the process layer for a sample of the wafers. The etch tool (50) is adapted to etch the process layer in accordance with an operating recipe. The process controller (60) is adapted to store a thickness profile model of the deposition tool (30), generate predicted process layer thicknesses for the wafers not measured by the metrology tool (40) based on the process layer thickness measurements of the wafers in the sample and the thickness profile model, and modify the operating recipe of the etch tool (50) based on the predicted process layer thicknesses. A method for controlling wafer uniformity includes storing a thickness profile model of a deposition tool (30); depositing a process layer on a plurality of wafers in the deposition tool (30); measuring the thickness of the process layer for a sample of the wafers; generating predicted process layer thicknesses for the wafers not measured based on the process layer thickness measurements and the thickness profile model; and etching the process layer in an etch tool (50) in accordance with an operating recipe, the operating recipe being based on the predicted process layer thicknesses.