Bi-directional semiconducting component has semiconducting chip with layer of alternating conductivity types between two main surfaces with drift zones and separating zones

摘要

The component has a semiconducting chip with a layer of alternating conductivity types between two main surfaces with drift zones of a first type and separating zones of a second type and first and second component zones on opposite sides of the layer of alternating conductivity types. The first and second component zones contain first and second zones of the second conductivity type isolated by a semiconducting zone of the first type. The component has a semiconducting chip with a layer of alternating conductivity types between two main surfaces with drift zones (1) of a first conductivity type and separating zones (2) of a second type and first (3-6) and second (13-16) component zones on opposite sides of the layer of alternating conductivity types. The first component zone contains first zones (4) of the second conductivity type and the second component zone contains second zones (14) of the second conductivity type. The first and second zones are isolated from each other by a semiconducting zone of the first type containing at least the drift zones, which also isolates the separating zones from the first and second zones. Independent claims are also included for the following: a method of manufacturing a bi-directional semiconducting component.