| 发明名称 |
Lumineszenzdiode |
| 摘要 |
A luminescent diode, based on GaAlAs comprises a window layer (5) with reduced thickness and doped throughout with Si or Sn. The net concentration of the doping is less than 1 x 10<18> cm<-3>. The degradation of the luminescent diode (1) is thus reduced.
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| 申请公布号 |
DE10032531(A1) |
申请公布日期 |
2002.01.24 |
| 申请号 |
DE20001032531 |
申请日期 |
2000.07.05 |
| 申请人 |
OSRAM OPTO SEMICONDUCTORS GMBH & CO. OHG |
发明人 |
GROENNINGER, GUENTHER;HEIDBORN, PETER |
| 分类号 |
H01L33/02;H01L33/30;(IPC1-7):H01L33/00 |
主分类号 |
H01L33/02 |
| 代理机构 |
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