发明名称 Method for manufacturing a conductor structure for an integrated circuit
摘要 A simple to manufacture conductor structure is described which requires only a small number of process steps. The conductor structure contains a structured, first insulating layer to which a first passivation layer is applied. A layer of conductive material is applied thereto and in turn a second passivation layer is applied to the layer of conductive material. A hard mask is applied to the second passivation layer. The layer of conductive material is removed in regions defined by the hard mask. The first passivation layer is removed in the regions defined by the hard mask by sputtering and is at least partially deposited again on the side wall of the layer of conductive material.
申请公布号 US2002009876(A1) 申请公布日期 2002.01.24
申请号 US20010801213 申请日期 2001.03.07
申请人 WEGE STEPHAN;MOLL PETER 发明人 WEGE STEPHAN;MOLL PETER
分类号 H01L21/3213;H01L21/768;(IPC1-7):H01L21/476;H01L21/44 主分类号 H01L21/3213
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