发明名称 |
SPUTTERING SYSTEM, SPUTTERING BACKUP UNIT, AND METHOD FOR CONTROLLING SPUTTERING |
摘要 |
PROBLEM TO BE SOLVED: To keep film deposition rate constant without changing electric power consumption. SOLUTION: In a vacuum chamber, high-frequency power is supplied to a target electrode and a substrate electrode to produce plasma and a target is sputtered by ions in the plasma to carry out film deposition on a substrate. The amount of impurities inside the vacuum chamber is detected. According to the resultant detected value, the phase difference of the high-frequency power supplied to the respective electrodes is controlled.
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申请公布号 |
JP2002020865(A) |
申请公布日期 |
2002.01.23 |
申请号 |
JP20000208227 |
申请日期 |
2000.07.05 |
申请人 |
HITACHI LTD |
发明人 |
NAGAMINE YOSHIHIKO;HIGUCHI YOSHIYA;SATO TADASHI;KIYONO TOMOYUKI;KAMEI MITSUHIRO |
分类号 |
C23C14/34;C23C14/54;H01J37/32;(IPC1-7):C23C14/34 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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