发明名称 SPUTTERING SYSTEM, SPUTTERING BACKUP UNIT, AND METHOD FOR CONTROLLING SPUTTERING
摘要 PROBLEM TO BE SOLVED: To keep film deposition rate constant without changing electric power consumption. SOLUTION: In a vacuum chamber, high-frequency power is supplied to a target electrode and a substrate electrode to produce plasma and a target is sputtered by ions in the plasma to carry out film deposition on a substrate. The amount of impurities inside the vacuum chamber is detected. According to the resultant detected value, the phase difference of the high-frequency power supplied to the respective electrodes is controlled.
申请公布号 JP2002020865(A) 申请公布日期 2002.01.23
申请号 JP20000208227 申请日期 2000.07.05
申请人 HITACHI LTD 发明人 NAGAMINE YOSHIHIKO;HIGUCHI YOSHIYA;SATO TADASHI;KIYONO TOMOYUKI;KAMEI MITSUHIRO
分类号 C23C14/34;C23C14/54;H01J37/32;(IPC1-7):C23C14/34 主分类号 C23C14/34
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