LOW MELTING POINT GLASS PASTE FOR FORMATION OF DIELECTRIC LAYER AND LOW MELTING POINT GLASS

摘要

PROBLEM TO BE SOLVED: To prevent decrease in the conductivity of a transparent electrode due to the high temperature process of forming a dielectric layer which covers the electrode. SOLUTION: The low melting point glass paste is to be used to form a dielectric layer on a transparent electrode pattern formed on a plasma display substrate and the paste is prepared by incorporating oxides as the main component of the transparent electrode by 0.1 to 10 wt.% into PbO-SiO2-B2O5-ZnO or PbO- SiO2-B2O3-ZnO-BaO glass. Specifically, when the transparent electrode is ITO essentially comprising indium oxide, the low melting point glass paste contains indium oxide. By incorporating the main component of the transparent electrode, the conductivity of the transparent electrode is not lost even in the succeeding high temperature process.