发明名称 |
Semiconductor device having improved contact hole structure, and method of manufacturing the same |
摘要 |
Within an interlayer dielectric film laid on a semiconductor substrate, a first conducting line is formed at a position lower than a second conducting line. Further, an etching stopper film, which has an etch selectivity differing from that of the interlayer dielectric films under a certain set of etching conditions, is formed at an intermediate position between the first conducting line and the second conducting line. A contact hole to reach the upper second conducting line is formed by etching under the condition that the interlayer dielectric film has a high etch selectivity with respect to the etching stopper film. The depth of a contact hole is controlled not to reach the lower first conducting line in the event the contact hole is offset from a upper conducting line.
|
申请公布号 |
US6340844(B1) |
申请公布日期 |
2002.01.22 |
申请号 |
US20000606153 |
申请日期 |
2000.06.29 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
SAKAMORI SHIGENORI |
分类号 |
H01L21/3213;H01L21/28;H01L21/60;H01L21/768;H01L23/522;(IPC1-7):H01L23/48;H01L23/52 |
主分类号 |
H01L21/3213 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|