发明名称 Method for making a metallic pattern by photolithography
摘要 A method for making a metallic pattern that includes redundant photolithography to significantly reduce the occurrence of defects in the metal layer that defines the desired metallic pattern. The presence of contaminants in the photoresist layer during exposure and developing away of portions of a photoresist layer can cause defects in the metal layer that defines the desired metallic pattern. Contaminants in the photoresist layer prevent portions of the photoresist layer from being exposed and developed away, so that portions of the photoresist layer that should be developed away remain in place, thereby causing the development of defects in the metal layer that defines the desired metallic pattern. These contaminants move to different positions during the developing away of the photoresist. By exposing those portions of the photoresist layer that are no longer shielded from exposure by the contaminants because the contaminants have moved to different positions, those portions of the photoresist layer now can be developed away, so that they are no longer present and no longer cause defects in the metal layer that defines the desired metallic pattern.
申请公布号 US6340626(B1) 申请公布日期 2002.01.22
申请号 US20000595631 申请日期 2000.06.16
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 DESAI KAMALESH S.;HUSSON BRIAN D.;JEANNERET MATHIAS P.;TIRCH, III STEPHEN J.
分类号 G03F7/20;H01L21/027;H05K3/00;H05K3/06;(IPC1-7):H01L21/322 主分类号 G03F7/20
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