| 摘要 |
A manufacturing method that prevents an enhanced diffusion while preventing channeling from occurring, and forms a local channel having a steep impurity concentration distribution with precise positioning. After forming a sacrifice film on the surface of a silicon substrate, ion implantation is performed from a perpendicular direction through a resist film mask to form a local channel. The thickness of the sacrifice film is greater than or equal to 10 nm and less than or equal to 100 nm. Indium is used as an ion species of the ion implantation.
|
