| 摘要 |
A semiconductor device which has trenches for raising the reliability thereof and a method for manufacturing such device. An electrode pad, and a protective film and an interlayer film which comprise an opening on top of this electrode pad, are formed on a substrate. A rewiring pattern which is in contact with the electrode pad at this opening is formed on top of the interlayer film. In addition, a trench is formed, by means of etching, in the region on this interlayer film where said rewiring pattern is not formed. A bump is formed on top of said rewiring pattern. The rewiring pattern and the trench are covered by means of a sealing film. The sealing film exposes the upper end of the bump. An external terminal is formed on the upper end of this bump. The trenches make the contact area between the covering film and the sealing film larger and therefore increase the adhesion between the covering film and the sealing film. The rougher the surface of the trench the better the adhesion between the covering film and the sealing film. Improving the adhesion makes it difficult for the sealing film to become detached so that the semiconductor device becomes more reliable. |
