| 摘要 |
PURPOSE: Provided is a semiconductor device having a trench capacitor including at least one trench formed through a base substrate layer, an insulating layer and a silicon layer formed in an SOI(Silicon On Insulator) substrate. CONSTITUTION: The semiconductor device comprises an SOI substrate having a base substrate layer(110), an insulating layer(115) and a silicon layer(120), and a trench capacitor formed in the SOI substrate and having at least one trench formed through the base substrate layer(110), the insulating layer(115) and the silicon layer(120). In this device, at least one trench has at least one silicon dioxide layer formed in the one trench. Preferably, a semiconductor material(190) is disposed in at least one trench forms an electrode of a semiconductor capacitor, and the semiconductor material(190) of the SOI substrate is disposed adjacent to the at least one trench forms a second electrode of the trench capacitor.
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