发明名称 DIFFERENTIALLY-PUMPED MATERIAL PROCESSING SYSTEM
摘要 A differentially pumped deposition system (100) is described that includes a deposition source (104), such as a magnetron sputtering source, that is positioned in a first chamber (106). The deposition source generates deposition flux comprising neutral atoms and molecules. A shield (114) that defines an aperture (116) is positioned in the path of the deposition flux (110). The shield passes the deposition flux though the aperture and substantially blocks the deposition flux from propagating past the shield everywhere else. A substrate support (118) is positioned in the second chamber (102) adjacent to the shield. The pressure in the second chamber is lower than a pressure in the first chamber. A dual-scanning system (126) scans the substrate support relative to the aperture with a first and a second motion, thereby improving uniformity of the deposited thin film.
申请公布号 WO0205324(A2) 申请公布日期 2002.01.17
申请号 WO2001US21516 申请日期 2001.07.09
申请人 OPNETICS CORPORATION;SFERLAZZO, PIERO 发明人 SFERLAZZO, PIERO
分类号 G02B5/28;C23C14/04;C23C14/22;C23C14/46 主分类号 G02B5/28
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