发明名称 Soft error immune dynamic random access memory
摘要 An alpha particle striking the cell of a DRAM bit can destroy stored charge, resulting in a single bit soft error. A DRAM architecture is described that circumvents this problem by storing every DRAM bit redundantly in two cells. If a stored charge is represented by a logic 1, then when reading a DRAM bit, if either of it's cells is storing charge then the bit is a logic 1. Only if both cells of a bit have no charge is the bit a logic 0.
申请公布号 US6339550(B1) 申请公布日期 2002.01.15
申请号 US19980222369 申请日期 1998.12.29
申请人 WANLASS FRANK M. 发明人 WANLASS FRANK M.
分类号 G11C5/00;G11C11/404;G11C11/4078;G11C11/4099;(IPC1-7):G11C16/04 主分类号 G11C5/00
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