发明名称 |
Electrostatic discharge protection device for semiconductor integrated circuit method for producing the same and electrostatic discharge protection circuit using the same |
摘要 |
An electrostatic discharge protection device according to the present invention is provided at an input or an output of a semiconductor integrated circuit for protecting an internal circuit of the semiconductor integrated circuit from an electrostatic surge flowing into or out of the semiconductor integrated circuit. The electrostatic discharge protection device includes: a thyristor; and a trigger diode for triggering the thyristor with a low voltage. The trigger diode includes: an n-type cathode high impurity concentration region; a p-type anode high impurity concentration region; and an insulator section for electrically insulating a silicide layer formed on a surface of the n-type cathode high impurity concentration region from another silicide layer formed on a surface of the p-type anode high impurity concentration region.
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申请公布号 |
US6338986(B1) |
申请公布日期 |
2002.01.15 |
申请号 |
US19990379108 |
申请日期 |
1999.08.23 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
KAWAZOE HIDECHIKA;AOKI EIJI;HSU SHENG TENG;FUJII KATSUMASA |
分类号 |
H01L21/332;H01L21/822;H01L21/8238;H01L27/02;H01L27/04;H01L27/092;H01L29/74;H01L29/866;(IPC1-7):H01L21/332 |
主分类号 |
H01L21/332 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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