| 摘要 |
PURPOSE: A method for cleaning a wafer using a laser and a vapor phase is provided to perform efficiently a cleaning process by using a cleaning gas, a laser, and a nitrogen gas. CONSTITUTION: A wafer is transferred automatically to a cleaning space. An etch process for a heavy metal and an oxide layer of the transferred wafer is performed by injecting a vapor phase gas including HCl, HF/H2O, or HF/alcohol. A metal contamination material is separated from a surface of the wafer by performing the etch process. The separated contamination material is discharged by using a vacuum pump. The contamination material such as particles, organics, and micro-contamination such as CMP(Chemical Mechanical Polishing) slurry are removed from the wafer by radiating a laser. The contamination material is discharged to the outside by injecting an inert gas to the separated contamination material.
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