| 摘要 |
PURPOSE: Integrated memory having memory cells with a magnetoresistive storage property and method of operating such a memory are provided to allow a comparatively reliable reading operation for one of the memory cells. CONSTITUTION: GMR/TMR elements are suitable as memory cells, as long as they have a higher impedance than the column lines and row lines. Here, the column lines are designated as bit lines(BL0 - BLn), the row lines as word lines(WL0 - WLm). The number of word lines and bit lines which the memory has here is given by way of example. The memory cells(MC), which are provided in a memory cell array(1) in the form of a matrix, are in each case connected between one of the bit lines(BL0 - BLn) and one of the word lines(WL0 - WLm). The word lines(WL0 - WLm) are also connected to a row selection circuit(2). The bit lines(BL0 - BLn) are connected to a sense amplifier or read amplifier(3), by which a data signal(DA) of one of the memory cells MC is read. For reading a data signal(DA), that bit line to which the memory cell to be read from is connected is connected to the sense amplifier(3). The selection circuit(2) and the sense amplifier(3) are driven in a suitable way by using the access controller as a control device through the use of the signals(S1,S2).
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