| 摘要 |
PROBLEM TO BE SOLVED: To provide a light emitting diode which can bring about enough current dispersion state through formation of a current dispersion layer of a thin film, enables application of an MOVPE method and at the same time realizes light emission characteristics of high brightness. SOLUTION: In a light-emitting diode, a light-emitting part 3 and a first conductivity type current dispersion layer 12 are formed on a substrate 1 of a first conductivity type, and electrodes 14, 15 are formed on a rear of the substrate 1 and the current dispersion layer 12. A tunnel junction part 7, whose core is a high carrier concentration layer 8 of a second conductivity type and a high carrier concentration layer 9 of a first conductivity type, is formed between the light-emitting part 3 and the current dispersion layer 12. |
