发明名称 THERMAL TREATMENT AND METHOD
摘要 PROBLEM TO BE SOLVED: To solve a problem of improving a joint between the flange of a reaction tube and a quartz cap in airtightness, where a large number of semiconductor wafers are loaded into the above vertical quartz reaction tube, and the silicon surface of a wafer is subjected to an oxidation treatment by the use of oxidizing gas containing hydrogen chloride gas. SOLUTION: A cap stopping up the lower end opening of a reaction tube is composed of a metal main body and a quartz cover covering the surface of a flange inside the peripheral part of the metal main body, an O ring is provided on the surface of the peripheral part of the cap to ensure airtightness for a joint between the cap and the flange, and a gap between the opposed surfaces of the cap and flange inside the O ring is purged with N2 gas to prevent hydrogen chloride gas from coming into contact with the metal and to cool down the O ring. A cooling water path is provided near to the O ring to cool down it too.
申请公布号 JP2002009010(A) 申请公布日期 2002.01.11
申请号 JP20000187765 申请日期 2000.06.22
申请人 TOKYO ELECTRON LTD 发明人 ISHII KATSUTOSHI
分类号 H01L21/22;H01L21/31;(IPC1-7):H01L21/22 主分类号 H01L21/22
代理机构 代理人
主权项
地址