| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor element which can prevent deterioration of a sealing material and maintain high brightness of a light-emitting diode. SOLUTION: The nitride semiconductor element, wherein an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer are laminated on a substrate, comprises an n-electrode provided to an exposed surface B of an n-type nitride semiconductor layer exposed by etching from a p-type nitride semiconductor layer side, and a p-electrode formed on an entire electrode provided to a surface A of a p-type nitride semiconductor layer. It has a second exposed surface C which is almost parallel to a lamination surface formed between the surface A of the p-type nitride semiconductor layer and the exposed surface B of the n-type nitride semiconductor layer at an end part of the nitride semiconductor element. The exposed surface C is formed between the surface A of the p-type nitride semiconductor layer and an upper end of an edge face D1 of the active layer, and the edge face D1 of the active layer is covered with an insulation layer. |
