| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method easy in manufacturing and capable of improving the response speed of a horizontal transistor so as to enhance an oscillation margin in the case of being applied to a regulator IC. SOLUTION: The semiconductor device is provided with a first conductivity type semiconductor substrate 1, a second conductivity type semiconductor layer 3 formed on the first conductivity type semiconductor substrate 1, a second conductivity type embedded diffusion layer 2 including a part of at least the surface of the first conductivity type semiconductor substrate 1, a first conductivity type emitter diffusion layer 5' functioning as the emitter of the horizontal transistorαand a first conductivity type collector diffusion layer 5 functioning as the collector of the horizontal transistor formed so as to be contacted from the surface of the second conductivity type semiconductor layer 3 to the second conductivity type embedded diffusion layer 2.
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