| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device where an interlayer insulating film having a hollow structure and a relative permittivity as near as 1 is formed by employing an oxide film having a high selectivity and carrying out a selective etching process. SOLUTION: The method related to the present invention, i.e., the method for manufacturing the semiconductor device forming the interlayer insulating film of a multilayer wiring with the hollow structure, comprises (a) a step for forming a SiOF film layer 1 on a wiring 2, (b) a step for forming a cap film layer 3 on the SiOF film layer 1, (c) a step for penetrating the cap film layer 3 and the SiOF film layer 1 and forming a contact hole 4, (d) a step for forming the contact plug 5 so as to fill the contact hole 4 and search the wiring 2, (e) a step for forming an opening part 6 having a prescribed size at the cap film layer 3, (f) a step for aligning on the contact plug 5 and forming a wiring 7, (g) a step for repeating the above steps (a) to (f) only prescribed number of times, (h) a step for selectively etching all the SiOF layers of each stage of the multilayer structure, and (i) a step for sealing 10 the opening part at the cap film layer of the highest stage. Only HF is used as an etching gas.
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