| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method including polysilicon resistor with a desired resistance processed by FG gas. SOLUTION: In a process to form a polysilicon resistor 10 formed on a semiconductor substrate 1, the concentration of an impurity into polysilicon is set at 1×1020 cm-3 or more, and a film or an aluminum wiring 9 is arranged at least on a part of the polysilicon resistor 10 to prevent diffusion of hydrogen when the concentration is treated in an FG gas atmosphere. The change in the resistance by FG gas treatment is suppressed to a small degree by setting the impurity implanted into the polysilicon at the value above. If the polysilicon resistance of wafer is modified, the resistance can be changed by modifying a film which prevents the diffusion of hydrogen formed on the polysilicon resistor and a desired polysilicon resistance can be obtained.
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