发明名称 EQUIPMENT AND METHOD FOR ELECTRON BEAM EXPOSURE
摘要 <p>PROBLEM TO BE SOLVED: To make a faster and more precice inspection of defects than the conventional methods, with a partial collective mask being mounted in an aligner. SOLUTION: An electron beam exposure system which performs electron beam exposure, using the partial in-batch mask 8, comprises a correlation calculation means 14 for calculating a correlation between a reflected electron signal waveform computed from the information on design of the partial collective mask 3 or reflected electron signal waveform obtained by electron beam scanning, and an actual reflected electron signal waveform of the electron beam exposure system; and a correlation determining means 15 for determining the peak value of correlation function, obtained from the correlation calculation means 14. In this system, inspection is performed for defects, with the partial in-batch mask being mounted in the system.</p>
申请公布号 JP2002008972(A) 申请公布日期 2002.01.11
申请号 JP20000191431 申请日期 2000.06.26
申请人 NEC CORP 发明人 KOJIMA YOSHIKATSU
分类号 G03F1/84;G03F1/86;G03F7/20;H01J37/305;H01L21/027;(IPC1-7):H01L21/027;G03F1/16 主分类号 G03F1/84
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